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| New Product V20100R & VF20100R Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TMBS (R) TO-220AB ITO-220AB FEATURES * Trench MOS Schottky technology * Low forward voltage drop, low power losses * High efficiency operation 2 V20100R PIN 1 PIN 3 PIN 2 CASE 3 VF20100R PIN 1 PIN 3 1 2 3 * Solder dip 260 C, 40 s * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. 1 PIN 2 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 2 x 10 A 100 V 120 A 0.65 V 150 C MECHANICAL DATA Case: TO-220AB and ITO-220AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig. 1) per device per diode SYMBOL VRRM IF(AV) IFSM VAC TJ, TSTG V20100R 100 20 10 120 1500 - 40 to + 150 VF20100R UNIT V A A V C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Operating junction and storage temperature range Document Number: 89062 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product V20100R & VF20100R Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Breakdown voltage TEST CONDITIONS IR = 1.0 mA IF = 5 A IF = 10 A IF = 5 A IF = 10 A VR = 70 V Reverse current per diode (2) VR = 100 V Notes: (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms TA = 25 C TA = 25 C VF TA = 125 C TA = 25 C TA = 125 C TA = 25 C TA = 125 C SYMBOL VBR TYP. 100 (minimum) 0.62 0.81 0.54 0.65 4 4 IR 5.6 MAX. 0.90 V 0.72 150 15 A mA A mA UNIT V Instantaneous forward voltage per diode (1) THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL RJC V20100R 2.8 VF20100R 5.0 UNIT C/W ORDERING INFORMATION (Example) PACKAGE TO-220AB ITO-220AB PREFERRED P/N V20100R-E3/4W VF20100R-E3/4W UNIT WEIGHT (g) 1.88 1.75 PACKAGE CODE 4W 4W BASE QUANTITY 50/tube 50/tube DELIVERY MODE Tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 25 10 Resistive or Inductive Load D = 0.5 D = 0.3 6 D = 0.2 4 D = 0.1 T 2 D = tp/T 0 0 25 50 75 100 125 150 175 0 2 4 6 8 10 12 tp D = 1.0 D = 0.8 Average Forward Rectified Current (A) VF20100R 15 10 5 Mounted on specific Heatsink 0 Average Power Loss (W) 20 V20100R 8 Case Temperature (C) Average Forward Current (A) Figure 1. Maximum Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 89062 Revision: 19-May-08 New Product V20100R & VF20100R Vishay General Semiconductor 100 10 Transient Thermal Impedance (C/W) Instantaneous Forward Current (A) Junction to Case TA = 150 C TA = 125 C TA = 100 C 10 1 TA = 25 C V20100R 1 0.01 0.1 1 10 100 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode 100 10 Transient Thermal Impedance (C/W) Instantaneous Reverse Current (mA) Junction to Case 10 TA = 150 C TA = 125 C 1 TA = 100 C 0.1 1 0.01 TA = 25 C 0.001 10 20 30 40 50 60 70 80 90 100 VF20100R 0.1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Per Diode Figure 7. Typical Transient Thermal Impedance Per Diode 10 000 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 1000 Junction Capacitance (pF) 100 10 0.1 1 10 100 Reverse Voltage (V) Figure 5. Typical Junction Capacitance Per Diode Document Number: 89062 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 New Product V20100R & VF20100R Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 3 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 1 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) PIN 2 ITO-220AB 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) REF. 0.076 (1.93) REF. 7 REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.135 (3.43) DIA. 0.122 (3.08) DIA. 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 45 REF. 0.600 (15.24) 0.580 (14.73) PIN 0.671 (17.04) 0.651 (16.54) 7 REF. 0.350 (8.89) 0.330 (8.38) 1 2 3 7 REF. 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.191 (4.85) 0.171 (4.35) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.028 (0.71) 0.020 (0.51) www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 89062 Revision: 19-May-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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